Capabilities of SiC CVD System
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Single wafer, dual reactor with auto wafer transfer system reduce the particles added during wafer load/unload.
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High cross-wafer epi-thickness & doping uniformity on 4”~ 8” SiC epitaxial wafers.
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Rapid heat up/cooling down with high rpm rotation reactor design, provide the capacity of 2K/month of 6um ultra low Killer defect epi-wafer.
生産能力
